This IGBT (insulated gate bipolar transistor) demonstrates the behaviour of an enhancement-mode field-effect transistor (MOSFET) at the input and the behaviour of a bipolar power transistor at the output.
With a fast acting inverse diode and an RCD protective circuit which can be switched off. For use in rapid switching applications with high voltages such as: DC controllers, switched-mode power supplies and inverters.
- Collector-emitter reverse-bias voltage (VCES): max. 1000 V
- Collector current (IC AV): max. 10 A
- Collector-emitter saturation voltage (VCE SAT): 3.5 V
- Gate-emitter input capacitance (CGE): 1.8 nF
